Ru

Ru Ruthenium Material for Advanced Energy and Thin Film Applications

BiTeSe Thermoelectric Material Sputtering Target

Ru

Ruthenium

Ru

Ru

Ruthenium (Ru)

Product Description

Ru is a high performance platinum group metal widely used in semiconductor manufacturing, thin film deposition, and advanced electronic applications. These materials are valued for their excellent electrical conductivity, outstanding corrosion resistance, high thermal stability, and exceptional mechanical durability.

Product Specifications

Composition: Ru (Ruthenium)
Purity: ≥ 99.99%
Density: ≥ 90% theoretical density
Dimension: OD 50.8 mm – 450.0 mm
Tolerance diameter: ±0.1 mm
Thickness tolerance: ±0.1 mm
Surface Roughness: 32 RMS

Ru Materials

High purity Ru material is designed for semiconductor manufacturing, thin film deposition, and advanced electronic applications. Ru belongs to the family of platinum group metals widely used in semiconductor devices, microelectronics, catalytic systems, and next-generation memory technologies.

These materials are engineered to provide excellent electrical conductivity, oxidation resistance, and thermal stability. By carefully controlling material purity and microstructure, Ru materials can be optimized for both research and industrial applications.

This material is commonly used in advanced electronics, semiconductor research, catalytic systems, and thin film deposition processes.

Applications of Ru Materials

Ru materials are widely used in advanced semiconductor and electronic technologies.

Common applications include:

  • Semiconductor and thin film research
  • Thin film deposition and sputtering targets
  • Electrodes for DRAM and advanced memory devices
  • Semiconductor interconnects and diffusion barriers
  • Catalytic and electrochemical applications
  • Microelectronics and integrated circuits
  • Advanced materials research and development


The ability to control the purity of Ru allows engineers and researchers to optimize electrical conductivity, corrosion resistance, thermal stability, and thin film performance for specialized applications.

Ru Sputtering Targets for Thin Film Deposition

Ru sputtering targets are used in physical vapor deposition (PVD) processes to produce high quality metallic thin films with excellent conductivity, adhesion, and corrosion resistance. These targets enable precise control of material composition during deposition, making them ideal for research laboratories, semiconductor manufacturing environments, and advanced materials development.

Thin films produced using Ru sputtering targets are commonly applied in semiconductor devices, DRAM capacitor electrodes, diffusion barriers, catalytic coatings, integrated circuits, and advanced electronic systems.

Notice: Pioneer Materials can manufacture custom Ru sputtering targets and metallic materials according to specific customer requirements, including tailored purity, density, dimensions, backing plate bonding, and custom geometries.

Request a Quote for Ru Materials

Contact Pioneer Materials to learn more about our high purity Ru materials and custom sputtering targets. Our team can provide customized compositions, dimensions, bonding options, and manufacturing solutions designed to meet your semiconductor, microelectronics, catalyst, and advanced thin film deposition requirements.

Request a Quote

Please fill out the form with your specific requirements, and our dedicated team will promptly review your request and provide you with a comprehensive quotation tailored to your needs. We are committed to delivering the highest quality materials and exceptional service to meet your unique demands.

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