InGaZnO₄ is an advanced oxide semiconductor material composed of indium, gallium, zinc, and oxygen, widely used in thin film transistors, semiconductor devices, and transparent electronic applications. These materials are valued for their excellent electron mobility, optical transparency, electrical stability, and uniform thin film performance.
By carefully controlling the In-Ga-Zn-O composition ratio, the material properties can be optimized for advanced display technologies, semiconductor processing, and transparent conductive applications. InGaZnO₄ materials are commonly used in TFT displays, oxide semiconductor research, and thin film deposition processes.
Composition: In, Ga, Zn, O (various atomic ratios)
Purity: 99.99%
Density: 90% theoretical density
Dimension: OD 50.8 mm – 450.0 mm
Tolerance diameter: ±0.1mm, thickness: ±0.1mm
Surface Roughness: 32RMS
Notice:the company is able to provide custom-made sputtering targets and compound materials based on the customers’ specific requirements in density, composition and dimensions.
High purity InGaZnO₄ material is designed for semiconductor manufacturing, thin film deposition, and advanced electronic applications. InGaZnO₄ belongs to the family of oxide semiconductor materials widely used in display technologies, transparent electronics, and next generation semiconductor devices.
These materials are engineered to provide excellent electrical conductivity, optical transparency, and environmental stability. By carefully controlling composition and structure, InGaZnO₄ materials can be optimized for both research and industrial applications.
This material is commonly used in advanced electronics, semiconductor research, TFT backplanes, and thin film deposition processes.
InGaZnO₄ materials are widely used in advanced semiconductor and display technologies.
Common applications include:
The ability to control the composition of InGaZnO₄ allows engineers and researchers to optimize electrical conductivity, optical transparency, and device stability for specialized applications.
InGaZnO₄ sputtering targets are used in thin film deposition processes to create high quality oxide semiconductor films. These targets enable precise control of material composition during deposition, making them ideal for research laboratories, semiconductor manufacturing environments, and advanced display technology development.
Thin films produced using InGaZnO₄ sputtering targets are commonly applied in TFT displays, transparent electronics, and advanced semiconductor devices.
Notice: Pioneer Materials can manufacture custom sputtering targets and compound materials according to specific customer requirements, including tailored density, composition, and dimensions.
Contact Pioneer Materials to learn more about our high purity InGaZnO₄ materials and custom sputtering targets. Our team can provide tailored compositions, dimensions, and manufacturing solutions designed to meet your research or industrial requirements.
Please fill out the form with your specific requirements, and our dedicated team will promptly review your request and provide you with a comprehensive quotation tailored to your needs. We are committed to delivering the highest quality materials and exceptional service to meet your unique demands.
+1-970-739-0393
3357 Candlewood Road Torrance, CA 90505 USA