GeTe is a phase change semiconductor material widely used in non-volatile memory, optical storage technologies, and advanced electronic devices due to its rapid switching properties.
GeTe
GeTe Phase Change Semiconductor Material for Non-Volatile Memory and Data Storage Applications
GeTe
Germanium Telluride
GeTe
GeTe
Germanium Telluride (GeTe)
Product Description
Product Specifications
Composition: CIGS (tailored to required atomic ratio)
Purity: 99.99%
Density: 5.7g/cm3（varies with composition）
Dimension: 50.8mm – 300mm
Tolerance diameter: ±0.1mm, thickness: ±0.1mm
Surface Roughness: 32RMS
Notice:the company is able to provide custom-made sputtering targets and compound materials based on the customers’ specific requirements in density, composition and dimensions.
Germanium Telluride (GeTe)
Germanium Telluride (GeTe) is a phase change semiconductor material widely used in non-volatile memory technologies, infrared optics, and advanced electronic applications. As a member of the chalcogenide material family, GeTe is known for its ability to rapidly and reversibly switch between amorphous and crystalline phases, enabling data storage based on changes in electrical resistance and optical properties.
GeTe is a key component in phase change memory (PCM) devices and is often used as a base material in Ge–Sb–Te (GST) systems. Its fast switching speed, high thermal stability, and excellent cycling endurance make it suitable for next generation memory and data storage technologies.
In addition, GeTe exhibits favorable thermoelectric and optical properties, making it useful in infrared devices, sensors, and advanced semiconductor research.
Applications of GeTe Materials
GeTe materials are widely used in memory, optical, and semiconductor technologies.
Common applications include:
- Phase change memory (PCM) devices
- Non-volatile data storage technologies
- Infrared optics and photonic devices
- Thermoelectric materials and energy conversion
- Semiconductor and thin film research
- Sensors and advanced electronic systems
The phase change properties of GeTe enable high speed switching and reliable data storage in advanced electronic applications.
GeTe Sputtering Targets for Thin Film Deposition
GeTe sputtering targets are used in thin film deposition processes to produce high quality phase change and semiconductor films. These targets provide precise control of composition and uniformity, ensuring consistent performance in memory and electronic devices.
Thin films produced using GeTe are widely applied in data storage, photonic systems, and advanced semiconductor technologies.
Notice: Pioneer Materials provides custom sputtering targets and compound materials manufactured to customer specifications, including tailored composition, density, and dimensions.
Request a Quote for GeTe Materials
Contact Pioneer Materials to learn more about our high purity GeTe phase change materials and custom sputtering targets.
Our team can provide tailored compositions, dimensions, and manufacturing solutions designed to support phase change memory, data storage technologies, and advanced semiconductor applications.
Request a Quote
Please fill out the form with your specific requirements, and our dedicated team will promptly review your request and provide you with a comprehensive quotation tailored to your needs. We are committed to delivering the highest quality materials and exceptional service to meet your unique demands.
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