CoFeB
CoFeB Cobalt Iron Boron Material for Advanced Energy and Thin Film Applications
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CoFeB
Cobalt Iron Boron (CoFeB)
Product Description
CoFeB is a magnetic alloy material composed of cobalt, iron, and boron, widely used in spintronic devices, magnetic tunnel junctions (MTJs), thin film deposition, and advanced semiconductor applications. These materials are valued for their high magnetic permeability, low coercivity, excellent soft magnetic properties, and compatibility with next-generation memory technologies.
Product Specifications
Composition: Co, Fe, B (various atomic ratios)
Purity: ≥ 99.99%
Density: ≥ 90% theoretical density
Dimension: OD 50.8 mm – 450.0 mm
Tolerance diameter: ±0.1 mm
Thickness tolerance: ±0.1 mm
Surface Roughness: 32 RMS
CoFeB Materials
High purity CoFeB material is designed for semiconductor manufacturing, thin film deposition, and advanced spintronic applications. CoFeB belongs to the family of soft magnetic alloy materials widely used in magnetic tunnel junctions, MRAM devices, magnetic sensors, and integrated electronic systems.
These materials are engineered to provide excellent magnetic performance, electrical conductivity, and thermal stability. By carefully controlling composition and microstructure, CoFeB materials can be optimized for both research and industrial applications.
This material is commonly used in advanced electronics, semiconductor research, spintronic devices, and thin film deposition processes.
Applications of CoFeB Materials
CoFeB materials are widely used in advanced semiconductor and magnetic technologies.
Common applications include:
- Semiconductor and thin film research
- Thin film deposition and sputtering targets
- Magnetic Random Access Memory (MRAM)
- Spin-transfer torque (STT) devices
- Magnetic tunnel junctions (MTJs)
- Magnetic sensors and spintronic devices
- Advanced materials research and development
The ability to control the composition of CoFeB allows engineers and researchers to optimize magnetic permeability, coercivity, electrical conductivity, and thermal stability for specialized applications.
CoFeB Sputtering Targets for Thin Film Deposition
CoFeB sputtering targets are used in physical vapor deposition (PVD) processes to produce high quality magnetic thin films with excellent compositional uniformity and magnetic performance. These targets enable precise control of material composition during deposition, making them ideal for research laboratories, semiconductor manufacturing environments, and advanced materials development.
Thin films produced using CoFeB sputtering targets are commonly applied in MRAM devices, magnetic tunnel junctions, spintronic components, magnetic sensors, and advanced electronic systems.
Notice: Pioneer Materials can manufacture custom CoFeB sputtering targets and compound materials according to specific customer requirements, including tailored composition, density, dimensions, backing plate bonding, and custom geometries.
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