TaBN
TaBN Tantalum Boron Nitride Material for Advanced Energy and Thin Film Applications
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TaBN
Tantalum Boron Nitride
TaBN
TaBN
Tantalum Boron Nitride (TaBN)
Product Description
TaBN is a high performance refractory ceramic material composed of tantalum, boron, and nitrogen, widely used in semiconductor manufacturing, thin film deposition, diffusion barrier layers, and advanced microelectronic applications. These materials are valued for their excellent electrical stability, high thermal resistance, superior chemical durability, and outstanding performance in demanding semiconductor processing environments.
Product Specifications
Composition: Ta, B, N (Tantalum Boron Nitride)
Purity: ≥ 99.99%
Density: ≥ 90% theoretical density
Dimension: OD 50.8 mm – 450.0 mm
Tolerance diameter: ±0.1 mm
Thickness tolerance: ±0.1 mm
Surface Roughness: 32 RMS
TaBN Materials
High purity TaBN material is designed for semiconductor manufacturing, thin film deposition, and advanced electronic applications. TaBN belongs to the family of refractory boron nitride materials widely used in integrated circuits, diffusion barrier layers, conductive films, and microelectronic devices.
These materials are engineered to provide excellent thermal stability, chemical resistance, electrical reliability, and diffusion barrier performance. By carefully controlling material purity and composition, TaBN materials can be optimized for both research and industrial applications.
This material is commonly used in advanced electronics, semiconductor research, integrated circuits, and thin film deposition processes.
Applications of TaBN Materials
TaBN materials are widely used in advanced semiconductor and microelectronic technologies.
Common applications include:
- Semiconductor and thin film research
- Thin film deposition and sputtering targets
- Diffusion barrier layers
- Integrated circuits and microelectronics
- High temperature electronic components
- Protective and conductive coatings
- Advanced materials research and development
The ability to control the composition of TaBN allows engineers and researchers to optimize electrical conductivity, diffusion barrier performance, thermal stability, and thin film reliability for specialized applications.
TaBN Sputtering Targets for Thin Film Deposition
TaBN sputtering targets are used in physical vapor deposition (PVD) processes to produce high quality refractory thin films with excellent diffusion barrier properties, thermal stability, and electrical performance. These targets enable precise control of material composition during deposition, making them ideal for research laboratories, semiconductor manufacturing environments, and advanced materials development.
Thin films produced using TaBN sputtering targets are commonly applied in semiconductor interconnects, diffusion barriers, integrated circuits, microelectronic devices, MEMS technologies, and advanced electronic systems.
Notice: Pioneer Materials can manufacture custom TaBN sputtering targets and boride nitride materials according to specific customer requirements, including tailored purity, density, dimensions, backing plate bonding, and custom geometries.
Request a Quote for TaBN Materials
Contact Pioneer Materials to learn more about our high purity TaBN materials and custom sputtering targets. Our team can provide customized compositions, dimensions, bonding options, and manufacturing solutions designed to meet your semiconductor, microelectronics, diffusion barrier, and advanced thin film deposition requirements.
Request a Quote
Please fill out the form with your specific requirements, and our dedicated team will promptly review your request and provide you with a comprehensive quotation tailored to your needs. We are committed to delivering the highest quality materials and exceptional service to meet your unique demands.
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