SiC
SiC Silicon Carbide Material for Advanced Energy and Thin Film Applications
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SiC
Silicon Carbide
SiC
SiC
Silicon Carbide (SiC)
Product Description
SiC is a high performance wide bandgap semiconductor material composed of silicon and carbon, widely used in semiconductor manufacturing, thin film deposition, power electronics, and advanced industrial applications. These materials are valued for their exceptional thermal conductivity, high breakdown voltage, excellent wear resistance, superior chemical stability, and outstanding performance in high temperature environments.
Product Specifications
Composition: Si, C (Silicon Carbide)
Purity: ≥ 99.99%
Density: ≥ 90% theoretical density
Dimension: OD 50.8 mm – 450.0 mm
Tolerance diameter: ±0.1 mm
Thickness tolerance: ±0.1 mm
Surface Roughness: 32 RMS
SiC Materials
High purity SiC material is designed for semiconductor manufacturing, thin film deposition, and advanced electronic applications. SiC belongs to the family of wide bandgap semiconductor materials widely used in power electronics, high temperature devices, semiconductor processing equipment, and wear-resistant components.
These materials are engineered to provide excellent electrical performance, thermal conductivity, and mechanical durability. By carefully controlling material purity and microstructure, SiC materials can be optimized for both research and industrial applications.
This material is commonly used in advanced electronics, semiconductor research, power semiconductor devices, and thin film deposition processes.
Applications of SiC Materials
SiC materials are widely used in advanced semiconductor and industrial technologies.
Common applications include:
- Semiconductor and thin film research
- Thin film deposition and sputtering targets
- Power semiconductor devices
- High voltage and high frequency electronics
- Wear-resistant and protective coatings
- High temperature electronic components
- Advanced materials research and development
The ability to control the purity of SiC allows engineers and researchers to optimize electrical performance, thermal conductivity, mechanical strength, and coating durability for specialized applications.
SiC Sputtering Targets for Thin Film Deposition
SiC sputtering targets are used in physical vapor deposition (PVD) processes to produce high quality semiconductor and ceramic thin films with excellent hardness, thermal stability, and electrical performance. These targets enable precise control of material composition during deposition, making them ideal for research laboratories, semiconductor manufacturing environments, and advanced materials development.
Thin films produced using SiC sputtering targets are commonly applied in power electronic devices, semiconductor components, MEMS devices, protective coatings, optical systems, and advanced engineering applications.
Notice: Pioneer Materials can manufacture custom SiC sputtering targets and ceramic materials according to specific customer requirements, including tailored purity, density, dimensions, backing plate bonding, and custom geometries.
Request a Quote for SiC Materials
Contact Pioneer Materials to learn more about our high purity SiC materials and custom sputtering targets. Our team can provide customized compositions, dimensions, bonding options, and manufacturing solutions designed to meet your semiconductor, power electronics, industrial engineering, and advanced thin film deposition requirements.
Request a Quote
Please fill out the form with your specific requirements, and our dedicated team will promptly review your request and provide you with a comprehensive quotation tailored to your needs. We are committed to delivering the highest quality materials and exceptional service to meet your unique demands.
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