HfO₂
HfO₂ Hafnium Oxide Material for Advanced Energy and Thin Film Applications
- Products
- Oxide Materials
- HfO₂
HfO₂
Hafnium Oxide (HfO₂)
Product Description
HfO₂ is a high-performance dielectric oxide material composed of hafnium and oxygen, widely used in advanced semiconductor devices, thin film deposition, and electronic applications. These materials are valued for their high dielectric constant, excellent thermal stability, low leakage current, and outstanding chemical resistance.
Product Specifications
Composition: Hf, O
Purity: 99.99%
Density: 90% theoretical density
Dimension: OD 50.8 mm – 450.0 mm
Tolerance diameter: ±0.1mm, thickness: ±0.1mm
Surface Roughness: 32RMS
HfO₂ Materials
High purity HfO₂ material is designed for semiconductor manufacturing, thin film deposition, and advanced electronic applications. HfO₂ belongs to the family of high-k dielectric oxide materials widely used in CMOS devices, memory technologies, and integrated circuits.
These materials are engineered to provide excellent dielectric performance, thermal stability, and chemical durability. By carefully controlling composition and microstructure, HfO₂ materials can be optimized for both research and industrial applications.
This material is commonly used in semiconductor devices, microelectronics, gate dielectrics, and thin film deposition processes.
Applications of HfO₂ Materials
HfO₂ materials are widely used in advanced semiconductor and electronic technologies.
Common applications include:
- High-k gate dielectrics
- Semiconductor and thin film research
- Thin film deposition and sputtering targets
- CMOS and logic devices
- DRAM and non-volatile memory technologies
- Optical coatings
- Advanced materials research and development
The ability to control the composition and microstructure of HfO₂ allows engineers and researchers to optimize dielectric performance, electrical reliability, and device scalability for specialized applications.
HfO₂ Sputtering Targets for Thin Film Deposition
HfO₂ sputtering targets are used in physical vapor deposition (PVD) processes to produce high quality dielectric thin films with excellent composition uniformity and electrical performance. These targets enable precise control of material composition during deposition, making them ideal for research laboratories, semiconductor manufacturing environments, and advanced materials development.
Thin films produced using HfO₂ sputtering targets are commonly applied in semiconductor devices, integrated circuits, memory technologies, optical coatings, and next-generation electronic systems.
Notice: Pioneer Materials can manufacture custom HfO₂ sputtering targets and compound materials according to specific customer requirements, including tailored composition, density, dimensions, backing plate bonding, and custom geometries.
Request a Quote for HfO₂ Materials
Contact Pioneer Materials to learn more about our high purity HfO₂ materials and custom sputtering targets. Our team can provide customized compositions, dimensions, bonding options, and manufacturing solutions designed to meet your semiconductor, electronic, and advanced thin film deposition requirements.
Request a Quote
Please fill out the form with your specific requirements, and our dedicated team will promptly review your request and provide you with a comprehensive quotation tailored to your needs. We are committed to delivering the highest quality materials and exceptional service to meet your unique demands.
Call Us
+1-970-739-0393
Address
3357 Candlewood Road Torrance, CA 90505 USA