Ge₂Sb₂Te₅
Ge₂Sb₂Te₅ Germanium Antimony Telluride Material for Advanced Energy and Thin Film Applications
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Ge₂Sb₂Te₅
Germanium Antimony Telluride
Ge₂Sb₂Te₅
Ge₂Sb₂Te₅
Germanium Antimony Telluride (Ge₂Sb₂Te₅)
Product Description
Ge₂Sb₂Te₅ (GST-225) is a phase change chalcogenide material composed of germanium, antimony, and tellurium, widely used in non-volatile memory devices, optical data storage, and thin film deposition applications. These materials are valued for their rapid and reversible phase transition, excellent electrical contrast, thermal stability, and long cycling endurance.
Product Specifications
Composition: Ge, Sb, Te (2:2:5 stoichiometric ratio or customized compositions)
Purity: 99.99%
Density: 90% theoretical density
Dimension: OD 50.8 mm – 450.0 mm
Tolerance diameter: ±0.1mm, thickness: ±0.1mm
Surface Roughness: 32RMS
Ge₂Sb₂Te₅ Materials
High purity Ge₂Sb₂Te₅ material is designed for semiconductor manufacturing, thin film deposition, and advanced memory applications. Ge₂Sb₂Te₅ belongs to the family of phase change materials widely used in non-volatile memory, optical recording media, and neuromorphic computing technologies.
These materials are engineered to provide fast switching speed, stable phase transitions, and excellent electrical performance. By carefully controlling composition and microstructure, Ge₂Sb₂Te₅ materials can be optimized for both research and industrial applications.
This material is commonly used in advanced electronics, semiconductor research, memory devices, and thin film deposition processes.
Applications of Ge₂Sb₂Te₅ Materials
Ge₂Sb₂Te₅ materials are widely used in advanced semiconductor and memory technologies.
Common applications include:
- Phase change memory (PCM)
- Non-volatile memory devices
- Optical data storage media
- Neuromorphic computing devices
- Semiconductor and thin film research
- Thin film deposition and sputtering targets
- Advanced materials research and development
The ability to control the composition of Ge₂Sb₂Te₅ allows engineers and researchers to optimize phase transition speed, electrical resistance contrast, and long-term device reliability for specialized applications.
Ge₂Sb₂Te₅ Sputtering Targets for Thin Film Deposition
Ge₂Sb₂Te₅ sputtering targets are used in physical vapor deposition (PVD) processes to produce high quality phase change thin films with excellent compositional uniformity and switching performance. These targets enable precise control of material composition during deposition, making them ideal for research laboratories, semiconductor manufacturing environments, and advanced materials development.
Thin films produced using Ge₂Sb₂Te₅ sputtering targets are commonly applied in phase change memory devices, embedded memory technologies, optical recording media, and next-generation electronic systems.
Notice: Pioneer Materials can manufacture custom Ge₂Sb₂Te₅ sputtering targets and compound materials according to specific customer requirements, including tailored composition, density, dimensions, backing plate bonding, and custom geometries.
Request a Quote for Ge₂Sb₂Te₅ Materials
Contact Pioneer Materials to learn more about our high purity Ge₂Sb₂Te₅ materials and custom sputtering targets. Our team can provide customized compositions, dimensions, bonding options, and manufacturing solutions designed to meet your semiconductor, phase change memory, and advanced thin film deposition requirements.
Request a Quote
Please fill out the form with your specific requirements, and our dedicated team will promptly review your request and provide you with a comprehensive quotation tailored to your needs. We are committed to delivering the highest quality materials and exceptional service to meet your unique demands.
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