GeSbTe is a phase change memory material widely used in data storage technologies due to its ability to rapidly switch between amorphous and crystalline states.
GeSbTe
GeSbTe Phase Change Memory Material for Non-Volatile Data Storage Applications
- Products
- Thermoelectric Materials
- GeSbTe
GeSbTe
Germanium Antimony Telluride
Ge₂Sb₂Te₅ / GST
GeSbTe
Germanium Antimony Telluride (Ge₂Sb₂Te₅ / GST)
Product Description
Product Specifications
Composition: Ge,Sb,Te(tailored to required atomic ratio)
Purity: 99.99%
Density: 6.38g/cm3（varies with composition）
Dimension: 50.8mm – 440mm
Tolerance diameter: ±0.1mm, thickness: ±0.1mm
Surface Roughness: 32RMS
Notice:the company is able to provide custom-made sputtering targets and compound materials based on the customers’ specific requirements in density, composition and dimensions.
Germanium Antimony Telluride (Ge₂Sb₂Te₅ / GST)
Germanium Antimony Telluride (Ge₂Sb₂Te₅), commonly referred to as GST, is a phase change semiconductor material widely used in non-volatile memory devices, optical storage technologies, and advanced electronic applications. GST belongs to the family of chalcogenide phase change materials known for their ability to rapidly and reversibly switch between amorphous and crystalline states.
This unique phase change capability enables GST to store data by altering its electrical resistance and optical reflectivity, making it a critical material for phase change memory (PCM), rewritable optical discs, and neuromorphic computing technologies. GST materials exhibit fast switching speeds, high data retention, and excellent cycling stability.
In addition, GST is used in thin film deposition, semiconductor research, and emerging memory and computing systems where precise control of material properties is essential.
Applications of GST Materials
GST materials are widely used in memory and semiconductor technologies.
Common applications include:
- Phase change memory (PCM) devices
- Rewritable optical storage (DVD, Blu-ray technologies)
- Neuromorphic and in-memory computing systems
- Semiconductor and thin film research
- Data storage and advanced electronics
- Optical switching and photonic devices
The rapid phase transition properties of GST enable high speed data storage with low power consumption and long-term reliability.
GST Sputtering Targets for Thin Film Deposition
GST sputtering targets are used in thin film deposition processes to produce high quality phase change and semiconductor films. These targets enable precise control of composition and uniformity, ensuring reliable switching performance in memory devices.
Thin films produced using GST are widely applied in non-volatile memory, optical storage, and next generation computing technologies.
Notice: Pioneer Materials provides custom sputtering targets and compound materials manufactured to customer specifications, including tailored composition, density, and dimensions.
Request a Quote for GeSbTe Materials
Contact Pioneer Materials to learn more about our high purity GeSbTe phase change materials and custom sputtering targets.
Our team can provide tailored compositions, dimensions, and manufacturing solutions designed to support your phase change memory, data storage, and advanced semiconductor applications.
Request a Quote
Please fill out the form with your specific requirements, and our dedicated team will promptly review your request and provide you with a comprehensive quotation tailored to your needs. We are committed to delivering the highest quality materials and exceptional service to meet your unique demands.
Call Us
+1-970-739-0393
Address
3357 Candlewood Road Torrance, CA 90505 USA