Sb₂Te₃

Sb₂Te₃ Material for Advanced Energy and Thin Film Applications

BiTeSe Thermoelectric Material Sputtering Target

Antimony Telluride

Sb₂Te₃

Sb₂Te₃

Antimony Telluride (Sb₂Te₃)

Product Description

Sb₂Te₃ is a high performance chalcogenide semiconductor material composed of antimony and tellurium, widely used in thermoelectric devices, phase change memory systems, and thin film deposition applications. These materials are valued for their excellent thermoelectric properties, electrical conductivity, thermal stability, and phase transition characteristics.

By carefully controlling the Sb-to-Te ratio, the material properties can be optimized for advanced semiconductor technologies, thermoelectric energy conversion, and memory device applications. Sb₂Te₃ materials are commonly used in advanced electronics, semiconductor research, and thin film deposition processes.

Product Specifications

Composition: Sb, Te (various atomic ratios)
Purity: 99.99%
Density: 90% theoretical density
Dimension: OD 50.8 mm – 450.0 mm
Tolerance diameter: ±0.1mm, thickness: ±0.1mm
Surface Roughness: 32RMS

Sb₂Te₃ Materials

High purity Sb₂Te₃ material is designed for semiconductor manufacturing, thin film deposition, and advanced thermoelectric applications. Sb₂Te₃ belongs to the family of chalcogenide semiconductor materials widely used in thermoelectric systems, phase change memory technologies, and energy conversion devices.

These materials are engineered to provide excellent electrical conductivity, thermoelectric efficiency, and chemical stability. By carefully controlling composition and structure, Sb₂Te₃ materials can be optimized for both research and industrial applications.

This material is commonly used in advanced electronics, semiconductor research, thermoelectric modules, and thin film deposition processes.

Applications of Sb₂Te₃ Materials

Sb₂Te₃ materials are widely used in advanced semiconductor and energy technologies.
Common applications include:

  • Thermoelectric generators and cooling devices
  • Phase change memory technologies
  • Semiconductor and thin film research
  • Thin film deposition and sputtering targets
  • Energy harvesting systems
  • Advanced materials research and development

 

The ability to control the composition of Sb₂Te₃ allows engineers and researchers to optimize electrical conductivity, thermal stability, and thermoelectric efficiency for specialized applications.

Sb₂Te₃ Sputtering Targets for Thin Film Deposition

Sb₂Te₃ sputtering targets are used in thin film deposition processes to create high quality thermoelectric and semiconductor films. These targets enable precise control of material composition during deposition, making them ideal for research laboratories, semiconductor manufacturing environments, and advanced materials development.

Thin films produced using Sb₂Te₃ sputtering targets are commonly applied in thermoelectric devices, microelectronics, and phase change memory technologies.

Notice: Pioneer Materials can manufacture custom sputtering targets and compound materials according to specific customer requirements, including tailored density, composition, and dimensions.

Request a Quote for Sb₂Te₃ Materials

Contact Pioneer Materials to learn more about our high purity Sb₂Te₃ materials and custom sputtering targets. Our team can provide tailored compositions, dimensions, and manufacturing solutions designed to meet your research or industrial requirements.

Request a Quote

Please fill out the form with your specific requirements, and our dedicated team will promptly review your request and provide you with a comprehensive quotation tailored to your needs. We are committed to delivering the highest quality materials and exceptional service to meet your unique demands.

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