TaN
TaN Tantalum Nitride Material for Advanced Energy and Thin Film Applications
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TaN
Tantalum Nitride
TaN
TaN
Tantalum Nitride (TaN)
Product Description
TaN is a transition metal nitride material composed of tantalum and nitrogen, widely used in semiconductor manufacturing, thin film deposition, diffusion barrier layers, and advanced electronic applications. These materials are valued for their excellent electrical conductivity, high thermal stability, corrosion resistance, and superior resistance to diffusion at elevated temperatures.
Product Specifications
Composition: Ta, N (various atomic ratios)
Purity: ≥ 99.99%
Density: ≥ 90% theoretical density
Dimension: OD 50.8 mm – 450.0 mm
Tolerance diameter: ±0.1 mm
Thickness tolerance: ±0.1 mm
Surface Roughness: 32 RMS
TaN Materials
High purity TaN material is designed for semiconductor manufacturing, thin film deposition, and advanced coating applications. TaN belongs to the family of transition metal nitride materials widely used in diffusion barrier layers, microelectronic devices, resistive thin films, and high-temperature coatings.
These materials are engineered to provide excellent electrical conductivity, thermal stability, and chemical resistance. By carefully controlling composition and microstructure, TaN materials can be optimized for both research and industrial applications.
This material is commonly used in advanced electronics, semiconductor research, protective coatings, and thin film deposition processes.
Applications of TaN Materials
TaN materials are widely used in advanced semiconductor and industrial technologies.
Common applications include:
- Semiconductor and thin film research
- Thin film deposition and sputtering targets
- Diffusion barrier layers for integrated circuits
- Thin film resistors
- Microelectronics and MEMS devices
- High-temperature protective coatings
- Advanced materials research and development
The ability to control the composition of TaN allows engineers and researchers to optimize electrical conductivity, diffusion resistance, thermal stability, and chemical durability for specialized applications.
TaN Sputtering Targets for Thin Film Deposition
TaN sputtering targets are used in physical vapor deposition (PVD) processes to produce high quality nitride thin films with excellent adhesion, conductivity, and diffusion barrier performance. These targets enable precise control of material composition during deposition, making them ideal for research laboratories, semiconductor manufacturing environments, and advanced materials development.
Thin films produced using TaN sputtering targets are commonly applied in semiconductor devices, integrated circuits, thin film resistors, diffusion barrier layers, and advanced electronic systems.
Notice: Pioneer Materials can manufacture custom TaN sputtering targets and compound materials according to specific customer requirements, including tailored composition, density, dimensions, backing plate bonding, and custom geometries.
Request a Quote for TaN Materials
Contact Pioneer Materials to learn more about our high purity TaN materials and custom sputtering targets. Our team can provide customized compositions, dimensions, bonding options, and manufacturing solutions designed to meet your semiconductor, coating, and advanced thin film deposition requirements.
Request a Quote
Please fill out the form with your specific requirements, and our dedicated team will promptly review your request and provide you with a comprehensive quotation tailored to your needs. We are committed to delivering the highest quality materials and exceptional service to meet your unique demands.
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